Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN® Technology at APEC 2019

Trucking News
6 Mar by Vitaliy Dadalyan

Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN® Technology at APEC 2019

EPC will exhibit live demonstrations showing how GaN technology’s
superior performance is transforming power delivery for entire
industries including computing, communications, and automotive.

EL SEGUNDO, Calif.–(BUSINESS WIRE)–lt;a href=”https://twitter.com/hashtag/APEC2019?src=hash” target=”_blank”gt;#APEC2019lt;/agt;–The EPC
team will be delivering eleven technical presentations on gallium
nitride (GaN) technology and applications at APEC
2019 in Anaheim, California from March 17th through the 21st.
In addition, the company will demonstrate its latest eGaN FETs and ICs
in customers’ end products that are enabled by eGaN technology.

In the company’s booth, #953, demonstrations addressing DC-DC
power levels starting at 120 W to 3 kW will be on display.
Demonstrations include a high-power density 48 V – 12 V non-isolated,
bidirectional converter capable of delivering 3 kW. In addition, a range
of 3-D real-time Lidar
imaging sensors used in autonomous vehicles will be displayed. Also on
display will be high power resonant wireless charging solution capable
of wirelessly powering a wide range of devices including cell phones,
notebook computers, monitors, wireless speakers, smartwatches, and table
lamps. Redefining the power conversion component, a new GaN IC will be
shown.

The Premier Event in Applied Power Electronics™, APEC, focuses on the
practical and applied aspects of the power electronics business. It is
the leading conference for practicing power electronics professionals
addressing a broad range of topics in the use, design, manufacture and
marketing of all kinds of power electronics components and equipment.
For more information on APEC go to http://www.apec-conf.org/

Technical
Presentations Featuring GaN FETs and Integrated Circuits by
EPC Experts:

  • Educational Seminar: WBG Device Characterization for Converter Design:
    Challenges and Solutions
    Instructors: Dr. Fred Wang, Dr. Zheyu
    Zhang, Dr. Edward A. Jones
  • Evaluation of GaN-Based Multilevel Converters
    Presenter: Dr.
    Yuanzhe Zhang
  • GaN’s Frontal Assault on Silicon at 48 Volts
    Presenter:Dr. Alex
    Lidow
  • Design and Measurement of High Power Nanosecond Pulse Circuits for
    Laser Drivers
    Presenter: Dr. John Glaser
  • Evaluation of Symmetrical and Asymmetrical Scaling GaN FETs in High
    Step-down Ratio Half-Bridge Converters
    Presenters: Dr. Jianjing
    Wang, Dr. Edward Jones, Dr. Michael de Rooij
  • GaN-Based High-Density Unregulated 48 V to x V LLC Converters with ≥
    98% Efficiency for Future Data Centers
    Presenters: Mohamed Ahmed,
    Dr. Michael de Rooij
  • Improving Efficiency in Highly Resonant Wireless Power Systems
    Presenters:
    Dr. Michael de Rooij, Dr. Yuanzhe Zhang
  • Rectifier Topology Optimization in Resonant Wireless Power Systems
    Presenter:
    Dr. Michael de Rooij, Dr. Yuanzhe Zhang
  • Thermal Design for a High-Density GaN-Based Power Stage
    Presenter:
    Dr. Edward Jones
  • GaN Reliability for Automotive – Testing Beyond AEC-Q
    Presenter:
    Dr. Robert Strittmatter
  • Hard-Switching Dynamic Rdson Characterization of a GaN FET with an
    Active GaN-Based Clamping Circuit
    Presenter: Dr. Edward Jones

Full schedule available at http://epc-co.com/epc/EventsandNews/APEC2019.aspx

Attendees interested in meeting with EPC applications experts during the
event can schedule sessions in the EPC booth, or for a private meeting,
meet in our customer suite. Private meeting requests can be submitted at http://epc-co.com/epc/Contact/RequestMeeting.aspx

About EPC

EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC converters, wireless power transfer, envelope
tracking, RF transmission, power inverters, remote sensing technology
(Lidar), and class D audio amplifiers with device performance many times
greater than the best silicon power MOSFETs.

www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion
Corporation, Inc.

Contacts

Renee Yawger
[email protected]

ByVitaliy Dadalyan